Conference program

SUNDAY, MARCH 26, 2017

 

   18:00 – 21:00                  Get Together & Conference Registration

                                   (HILTON HOTEL DRESEN)

MONDAY, MARCH 27, 2017

 

 

 

08:00 – 17:00

Conference Registration

 

 

13:45 – 17:00

Poster Exhibit

 

 

 

 

Conference Opening

 

 

09:00 – 09:10

 

Welcome

Stefan E. Schulz

Technische Universität Chemnitz, Center for Microtechnologies, Germany

 

 

 

 

 

Keynote Presentation

 

 

09:10 – 09:55

 

Keynote

 

“21st century's prophesies: How future trends are challenging the semiconductor business”

 

Jakob Kriz

Infineon Technologies Dresden

 

 

 

 

 

 

 

 

 

SESSION 1: Integration                     Chair: S. E. Schulz

 

 

09:55 – 10:15

 

 

 

 

 

 

“SIMULATION ASSISTED BEOL PROCESS OPTIMIZATION”

Marcus Wislicenus1*, Johannes Koch1, Benjamin Uhlig1, Axel Preusse2

1 Fraunhofer IPMS - Center Nanoelectronic Technologies, Königsbrücker Str. 178, 01099 Dresden, Germany

2 GLOBALFOUNDRIES Module One LLC Co. KG, Wilschdorfer Landstr. 101, 01109 Dresden, Germany

 

 

10:15 - 10:35

 

“MIMCAP DEVICE INTEGRATION WITH OPTIMIZED HIGH-K DIELECTRIC MATERIAL”

Prakash Periasamy, Archana Subramaniyan, Lili Cheng, Dina Triyoso, Ben Kim, Robert Fox

GLOBALFOUNDRIES INC., Malta, New York, USA

 

 

10:35 – 11:00

Coffee Break

 

 

 

 

 

Session 2: 3D Integration/Packaging     Chair: T. Ohba

 

 

11:00 – 11:35

Invited

"TRENDS IN PACKAGING – FROM FAN-OUT WAFER LEVEL PACKAGING TO PANEL LEVEL PACKAGING "

Michael Töpper

Fraunhofer IZM

 

 

11:35 – 11:55

“MORPHOLOGY OF IMC IN THE BINARY SYSTEMS OF CO/SN AND CU/SN”

Fuya Nagano1,2, Jaber Derakhshandeh2, Lin Hou2, Myriam Van De Peer2, Inge De Preter2, Shamin Houshmand Sharifi2,4 , Masanori Kajihara3, Kenneth June Rebibis2, Andy Miller2, Gerald Beyer2 and Eric Beyne2

1) Graduate School, Tokyo Institute of Technology, Yokohama 226-8502, Japan

2) imec, Kapeldreef 75, 3001 Leuven, Belgium

3) Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

4) Technical University of Dresden (TU Dresden), Dresden, 01069, Germany

 

 

11:55 – 12:15

COMPARING SAM (SELF-ASSEMBLED MONOLAYER) DEPOSITION METHODS TO PASSIVATE COPPER MICROBUMPS FOR 3D STACKING”

Shamin Houshmand Sharifi1,2, Jaber Derakhshandeh2, Silvia Armini2, Inge De Preter2 , Pieter Bex2, Lin Hou2, Johann W. Bartha1, Volker Neumann1, Sebastiaan Herregods2, Fuya Nagano2,3, Kenneth June Rebibis2, Andy Miller2, Ingrid De Wolf2, Gerald Beyer2 and Eric Beyne2

1Department of Electrical and Computer Engineering, Technical University of Dresden, 01069 Dresden, Germany

2 IMEC, Kapeldreef, 3001 Leuven, Belgium

3 Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

 

 

12:15 – 12:35

3D SYSTEM INTEGRATION ON 300 MM WAFER LEVEL: HIGH-ASPECT-RATIO TSVS WITH RUTHENIUM SEED LAYER BY THERMAL ALD AND SUBSEQUENT COPPER ELECTROPLATING”

Sebastian Killge a*, Irene Bartusseck b, Marcel Junige a, Volker Neumanna, Christian Wenzel a, Matthias Böttcher b, Matthias Albert a, M. Jürgen Wolf b, Johann W. Bartha a

aTechnische Universität Dresden, Institute of Semiconductors and Microsystems (IHM), 01062 Dresden, Germany

bFraunhofer IZM-ASSID, Ringstrasse 12, 01468 Moritzburg, Germany

 

 

12:35 – 13:45

Lunch

 

 

12:45 – 14:15

Committee Meeting

 

 

13:45 – 15:30

Poster Session

 

 

15:00 – 15:30

Coffee Break

 

 

 

 

 

Session 3: Silicides 1                                 Chair: C. Wiemer

 

 

15:30 – 15:50

“PHASE FORMATION BETWEEN NI THIN FILMS AND GAAS SUBSTRATE”

S. Rabhiab, C. Perrin-Pellegrinoa*, S. Zhioua, , M.C. Benoudiab , M. Texiera, K. Hoummadaa

a Institut Matériaux Microélectronique Nanosciences de Provence (IM2NP), Aix-Marseille Université (AMU), France

b Laboratoire Mines Métallurgie Matériaux (L3M), Ecole Nationale Supérieure des Mines et de la Métallurgie (ENSMM), Annaba, Algérie.

 

 

15:50 – 16:10

 

 

 

 

 

 

 

 

ON THE INHERITANCE OF CRYSTALLOGRAPHIC TEXTURE DURING THE NICKEL SILICIDE SOLID-PHASE REACTION.”

F.A. Geenena, E. Solanoa, C. Mocutab, J. Jordan-Sweetc, C. Lavoiec, C. Detaverniera

a Ghent University, CoCooN, krijgslaan 281/S1, 9000 Ghent, Belgium

b Synchrotron SOLEIL, L’orme des Merisiers, Saint Aubin – BP 48, Gif-sur-Yvette, France

cIBM T.J. Watson Research Center, Yorktown Heights, NY, USA

 

 

16:10-16:30

 

“A MODIFIED SCHEME TO REDUCE THE SPECIFIC CONTACT RESISTIVITY OF NISI/SI CONTACTS BY MEANS OF DOPANT SEGREGATION TECHNIQUE”

Ningyuan Duan1, Guilei Wang1, Jun Luo1,2*, Shujuan Mao, Henry Radamson1, Wenwu Wang1, Dapeng Chen1, Junfeng Li1, Chao Zhao1,2, and Tianchun Ye1,2

1)Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2)University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China

 

 

19:00 – 22:00

Conference dinner

 

DINNER SPEECH:

“MICROTUBULAR NEMS FOR ON- AND OFF-CHIP APPLICATIONS”

o. g. schmidt

leibniz institute for solid state and materials research

 

TUESDAY, MARCH 28, 2017

 

08:00 – 16:40

Conference Registration

 

 

09:00 – 15:30

Poster Exhibit

 

 

 

 

SESSION 4: Metallization 1                     chair: S. E. Schulz

 

09:00 – 09:20

 

THERMAL ALD OF METALLIC COPPER ON COBALT FOR ADVANCED INTERCONNECTS”

Colin Georgi1, Marcel Melzer2, Jörn Bankwitz2, Charan K. Nichenametla2, Heinrich Lang3, Stefan E. Schulz1,2

1 Fraunhofer Institute for Electronic Nanosystems, Technologie-Campus 3, 09126 Chemnitz, Germany

2 Chemnitz University of Technology, Center for Microtechnologies, 09126 Chemnitz, Germany

3 Chemnitz University of Technology, Institute of Chemistry, 09126 Chemnitz, Germany

 

 

09:20 – 09:40

INVESTIGATION OF ISOLATION LINER AND CU DIFFUSION BARRIER BY (PE)ALD, (PE)CVD AND FAST FOR TSV APPLICATION.”

Fabien Piallat1*, Laetitia Bonnet1, Julien Vitiello1

1KOBUS, 611 rue Aristide Bergès, Z.A. de Pré Millet, 38330 Montbonnot-Saint-Martin, France

 

 

09:40 – 10:00

MULTISCALE SIMULATION OF BARRIER/SEED PVD”

Erik E. Lorenz1, Jörg Schuster1, Stefan E. Schulz1,2

1 Center for Microtechnologies, Chemnitz University of Technology, Germany

2 Fraunhofer Institute for Electronic Nano Systems, Germany

 

 

10:00 – 10:20

“PROCESS-ORIENTED MODELLING OF STRESSES AND MECHANICAL CONFINEMENT IN ADVANCED NANO-INTERCONNECTS; IMPLICATIONS FOR ELECTROMIGRATION”

 

Houman Zahedmanesh, Kristof Croes, Zsolt Tőkei

imec, Kapeldreef 75, Leuven, 3001, Belgium

 

 

10:20 – 10:45

Coffee Break

 

 

 

 

 

 

SESSION 5: Silicides 2                                   chair: O. Thomas

 

 

10:45 – 11:05

“PHOSPHORUS REDISTRIBUTION DURING SILICIDATION FOR IN-SITU AND EX-SITU DOPED SILICON”

M. Lemang1, 2, 3, M. Descoins3, Ph. Rodriguez2, F. Nemouchi2, M. Grégoire1 and D. Mangelinck3

1STMicroelectronics, 850, rue Jean Monnet, 38926, Crolles cedex, France

2 Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA-, LETI, MINATEC Campus, F-38054 Grenoble, France. 3 CNRS, Aix Marseille Université, IM2NP (UMR 7334) Faculté de Saint-Jérôme, F-13397 Marseille Cedex, France

 

 

11:05 – 11:25

“COMBINED EFFECT OF PT AND W ALLOYING ELEMENTS ON THE NI-SILICIDE FORMATION”

T. Luoa, D. Mangelinckb, M. Descoinsa, M. Bertogliob, N. Mouaici c, A. Hallénd, C. Girardeauxa

a Aix-Marseille Univ, CNRS, IM2NP, Faculté Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France

b CNRS, Aix-Marseille Univ, IM2NP, Faculté Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France

c National School of Mines and Metallurgy ENSMM-Annaba, Ex CEFOS Chaiba BP 233 RP Annaba, W129, Sidi Amar, Algeria

d KTH Royal Institute of Technology, School of Information and Communication Technology (ICT), SE-164 40 Kista-Stockholm, Sweden

 

 

11:25 – 11:45

DEGRADATION MECHANISM OF NI1-XPTX (0 < X < 0.15) GERMANOSILICIDES: EXPERIMENTS AND MODELLING”

Dominique Mangelinck1,a, Emilie Bourgot1,2,3, Patrice Gergaud2, Fabrice Nemouchi2, Magali Gregoire3 , Marion Descoins1, Xipeng Tan1

1 CNRS, Aix Marseille Université, IM2NP (UMR 7334) Faculté de Saint-Jérôme, F-13397 Marseille Cedex, France

2 Univ. Grenoble Alpes, F-38000 Grenoble, France CEA-, LETI, MINATEC Campus, F-38054 Grenoble, France. 3STMicroelectronics, 850, rue Jean Monnet, 38926, Crolles cedex, France

 

 

11:45 – 12:05

“PIONEERING CHARACTERIZATION OF NI-BASED SILICIDES ON SIGE USING 3D FLUORESCENCE TOMOGRAPHY”

 

P. Bleueta, E. Bourjota, Ph. Rodrigueza, P. Cloetensb, P. Gergauda, F. Nemouchia

a Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

b European Synchrotron Radiation Facility, 38043, Grenoble Cedex 9, France

 

 

12:05 – 13:25

Lunch

 

 

 

 

 

 

 

 

 

SESSION 6: Flexible/Stretchable Devices          chair: S. Maitrejean

 

 

13:25 – 14:00

INVITED: „DIRECT CORRELATION BETWEEN MATERIAL STRUCTURE AND ELECTRONIC/MECHANICAL PROPERTIES OF POLYMER FILMS ON HARD AND STRETCHABLE SUBSTRATES”

Souren Grigorian

University of Siegen (Germany)

 

 

14:00 – 14:20

“ELABORATION AND CHARACTERIZATION OF A STRETCHABLE AND FLEXIBLE ULTRA-THIN SEMI-CONDUCTOR FILM”

P. Montméat a, c, S. Tardif b, c, T. Enot a, c, G. Enyedi a, c, F. Rieutord b, c and F. Fournel a, c

a- CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble, France

b- CEA, INAC, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble, France

c- Univ. Grenoble Alpes, F-38000 Grenoble, France

 

 


14:20 – 14:55

INVITED: “LIQUID METAL INTERCONNECTS AND THERMAL ELASTOMER PACKAGING FOR SOFT AND STRETCHABLE SYSTEMS”

 

Seung Hee Jeoung

Uppsala University, Sweden

 

 

14:55 – 15:20

Coffee Break

 

 

 

 

 

SESSION 7: Characterization                chair: M. Hecker

 

 

15:20 – 15:40

COMPOSITION AND PHASE SEQUENCE OF NI-INGAAS INTERMETALLICS: AN IN SITU XRD AND ATOM PROBE TOMOGRAPHY STUDY”

S. Zhioua,b*, Ph. Rodrigueza, F. Nemouchia, C. Perrin-Pellegrinob, P. Gergauda and K. Hoummadab

A Univ. Grenoble Alpes, F-38000, France ; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

B IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France

 

 

15:40 – 16:00

“KISSINGER KINECTS ANALYSIS OF NI/INGAAS/INP SOLID STATE REACTIONS THROUGH 3D RSM MEASUREMENTS”

J. Channagiri1,S. Zhiou1,2, P. Rodriguez1, F. Nemouchi1, N. Blanc3,4, N. Boudet3,4, P. Gergaud1

 1Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

 2IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme, case 142, 13397 Marseille, France.

3,4Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble; CNRS, Inst. NEEL, F-38042 Grenoble, France

 

 

16:00 – 16:20

IN SITU COMBINED X-RAY DIFFRACTION AND OPTICAL CURVATURE MEASUREMENTS TO STUDY MICROSTRUCTURE AND STRESS INDUCED DURING THE CRYSTALLIZATION OF GETE THIN FILMS”

M. Gallard1,2, M. S. Amara1, F. Lauraux1, C. Guichet1, M.-I. Richard1,5, S. Escoubas1, C. Mocuta2, P. Noé3, C. Sabbione3, F. Hippert4, M. Putero1, N. Burle1, O. Thomas1

1 Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille, France

2 Synchrotron SOLEIL, l’Orme des Merisiers, Saint-Aubin–BP 48, 91192 Gif-sur-Yvette, France

3 Université Grenoble Alpes, CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France

4 LNCMI, CNRS-UGA-UPS-INSA, 25 rue des Martyrs, 38042 Grenoble, France

5 ID01/ESRF, The European Synchrotron, 71 rue des Martyrs, 38043 Grenoble, France

 

 

17:30 – 21:00

networking event:

Visit of the The vw Transparent Factory DIE GLÄSERNE MANUFAKTURand Dinner in the adjacent restaurant “Pattis”

 

Meeting point: 16:50 Hilton Hotel Lobby (20-minute walk to the factory)

WEDNESDAY, MARCH 29, 2017

 

08:00 – 14:00

Conference Registration

 

 

 

 

SESSION 8: Nanoscale Devices              chair: D. Erbetta

 

 

08:45 – 09:05

“IN-BASED CHALCOGENIDE NANOWIRES FOR ULTRA-SCALDED PHASE CHANGE MEMORY APPLICATIONS”

C. Wiemer1, S. Selmo 1,2, R. Cecchini1, S. Cecchi1, M. Fanciulli1,2, E. Rotunno3, L. Lazzarini3, M. Rigato4, D. Pogany4, A. Lugstein4 and M. Longo1

1Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, MB, Italy

2Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Via R. Cozzi 53, 20126 Milano, Italy

3IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy

4Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria

 

 

09:05 – 09:25

 

“RESISTIVE SWITCHING DYNAMICS IN MEMRISTIVE BIFEO3 WITH METALLIC TOP AND BOTTOM ELECTRODES”

Nan Du1, Niveditha Manjunath1, Yuan Li1, Tiangui You2, Danilo Bürger1, Ilona Skorupa1,3, Damian Walczyk4, Christian Walczyk4, Thomas Schröder4, Stephan Menzel5, Eike Linn5, Rainer Waser5, Ramona Ecke6, Stefan E. Schulz6, Oliver G. Schmidt1,7, Heidemarie Schmidt1

1)Faculty of Electrical and Information Engineering, TU Chemnitz

2) State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai

3) Institute of Ion Beam Physics and Materials Research, HZDR

4) Leibniz-Institut für innovative Mikroelektronik, IHP

5) Peter Grünberg Institut, Forschungszentrum Jülich

6)Fraunhofer-Institut für Elektronische Nanosysteme, Chemnitz

7) Institute for Integrative Nanosciences, IFW Dresden

 

 

09:25 – 09:45

 

SIMULATION OF RECONFIGURABLE FIELD-EFFECT TRANSISTORS: IMPACT OF THE NISI2-SI INTERFACES, CRYSTAL ORIENTATION, AND STRAIN”

Florian Fuchs1,2,3,4, Jörg Schuster2,4,5, Sibylle Gemming1,2,3

1 Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden

2 Center for Advancing Electronics Dresden, 01062 Dresden

3 Institute of Physics, TU Chemnitz, 09107 Chemnitz

4 Fraunhofer Institute for Electronic Nano Systems, 09126 Chemnitz

 

 

09:45 – 10:05

 

 

 

 

 

 

 

 

 

 

“MEMRISTIVE BFO WITH METALLIC ELECTRODES AS ARTIFICIAL SYNAPSE IN MACHINE LEARNING CIRCUITS”

Mahdi Kiani1, Nan Du1,4, Christian G. Mayr2, Danilo Bürger1,4, Ilona Skorupa1,3, Ramona Ecke4, Stefan E. Schulz4,5, Oliver G. Schmidt1,6, Heidemarie Schmidt1,4

1Materials Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, Germany— 2Highly-parallel VLSI systems and Neuro-Microelectronics, Technische Universität Dresden, Dresden, Germany —3Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany —4Fraunhofer Institute for Electronic Nano Systems, Chemnitz, Germany— 5Chemnitz University of Technology, Center for Microtechnologies, Chemnitz, Germany— 6Institute for Integrative Nanosciences, IFW Dresden, Dresden,Germany

 

 

10:05 – 10:25

 

“WAFER-LEVEL INTEGRATION OF CARBON NANOTUBES INTO MICRO-ELECTRO-MECHANICAL SYSTEMS“

Jens Bonitz1, Sascha Hermann1, Steffen Hartmann2, Simon Böttger1, Bernhard Wunderle2, Stefan E.Schulz1,3

1 Chemnitz University of Technology, Center for Microtechnologies

2 Chemnitz University of Technology, Materials and Reliability of Microsystems

3 Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz

 

 

10:25 - 10:50

COFFEE BREAK

 

 

 

 

 

SESSION 9: Dielectrics & Metallization 2        chair:   S. e. Schulz                                                 

 

 

10:50 – 11:25

INVITED: “PORE PROTECTION TECHNIQUES FROM ROOM- TO CRYO-TEMPERATURE PROCESSING”

Jean-Francois de Marneffe

imec

 

 

11:25 – 11:45

FIRST-TIME IN SITU OBSERVATION OF POLYMERIZATION AND DAMAGE DURING ULK ETCHING”

Micha Haase1, Marcel Melzer2 and Stefan E. Schulz1, 2

1Fraunhofer Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, D-09126 Chemnitz, Germany

2Chemnitz University of Technology, Center for Microtechnologies, Reichenhainer Strasse 70, D-09107 Chemnitz, Germany

 

 

11:45 – 12:05

 

IN-VACUO PHOTOEMISSION STUDIES OF THE CHEMICAL INTERACTIONS OF MANGANESE METAL WITH SELF-ASSEMBLED MONOLAYER (SAM) TERMINATED SIO2 AND SPIN-ON-GLASS (SOG) DIELECTRICS FOR BARRIER LAYER APPLICATIONS.”

A. Brady-Boyd,1 S. Armini,2 G. Hughes,1 R. O’Connor1 and J. Bogan1

1School of Physical Sciences, Dublin City University, Dublin 9, Ireland.

2IMEC, B-3001 Heverlee, Leuven, Belgium.

 

 

12:05 – 12:40

 

INVITED: “TRENDS IN SCALING THE CU METALLIZATION”

Marleen H. van der Veen*, N. Jourdan, V. Vega Gonzalez, K. Vandersmissen, C. J. Wilson, O. Varela Pedreira, J. Bömmels, H. Struyf, Z. Tőkei

imec, Kapeldreef 75, 3001 Leuven, Belgium

 

 

12:40 – 13:00

 

CHARACTERIZATIONS OF FLUORINE-FREE TUNGSTEN LINER AND ITS APPLICATION FOR PCRAM”

R. Famuloka, Ph. Rodrigueza, Y. Le Friecb, J.-Ph. Reynardb, K. Dabertrandb, B.-N. Bozonc, S. Faviera,b, Y. Mazela, E. Nolota, B. Previtalia, P. Gergauda, F. Nemouchia

a Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

b STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France

c Applied Materials France, 864 chemin des Fontaines, 38190 Bernin, France

 

 

13:00 – 13:10

CLOSING REMARKS

 

 

13:10 - 14:45

LUNCH