Topics & Committee

Session Categories#

Materials, Processes & Integration
- Metallization for advanced interconnects; local interconnects; contacts; metal gates; through silicon vias; power semiconductors
- Dielectrics; porous ULK; hybrid materials; pore sealing; pore stuffing; MOF, patterning; cleaning; restoration; surface functionalization
- Metal or dielectric liners and diffusion barriers; etch-stop; capping


Deposition PVD; CVD; ALD; ELD; ECD; SAMs, reflow; e-beam
- Patterning processes and integration; double & triple patterning; advanced etching techniques; Atomic Layer Etching (ALE)
- Planarization; CMP; slurry; pad; anti-corrosion methods
- Device integration and novel architectures; local interconnects
- Silicides and germanides
- Contacts to III-V materials: for CMOS, power, LED, Laser applications
- Materials for memories and memristive devices
- 1D and 2D Nanomaterials (graphene; carbon nanotubes; nanowires; nanodots)
- Packaging materials and technologies;


Advanced Characterization and Modeling techniques
- Analytical techniques; defect inspection; x-ray/electron tomography; spectroscopy; microscopy; scanning probe methods
- Reliability and failure analysis; lifetime extrapolation methodologies; chip-package interaction (CPI)
- Modeling and simulation of process steps; equipment; interconnect systems; material properties; nanoscale devices; reliability


Applications including nanoscale
- Alternative interconnects; optical interconnects and wireless systems
- 3D integration; COW, WOW; thinning; bonding; TSV; micro-bumps
- System-on-chip and system-in-package
- Memories devices (MRAM; FeRAM; CBRAM; PCRAM, ReRAM)
- Advanced devices; single electron device; tunnel FET, memristive devices
- Energy harvesting/storage; MEMS/NEMS; sensors and actuators

Scientific Program Committee#

 

S. E. Schulz (chair) Technische Universität Chemnitz and Fraunhofer ENAS, Germany
T. Chevolleau CNRS-LTM, Grenoble, France
C. Detavernier University of Gent, Belgium
R. Engl Infineon Technologies, Munich, Germany
D. Erbetta ST Microelectronics, Agrate Brianza, Italy
A. Farcy ST Microelectronics, Crolles, France
S. Haukka ASM Microchemistry, Finland
M. Hecker GLOBALFOUNDRIES, Dresden, Germany
P. McNally Dublin City University – Ireland
C. Wiemer IMM-CNR, Agrate Brianza, Italy
S. Maitrejean CEA-Leti, Grenoble, France
Y. Shacham-Diamand University of Tel Aviv, Israel
O. Thomas Aix-Marseille Université, France
C.J. Wilson Imec, Leuven, Belgium
S. Zhang Uppsala University, Sweden
Q. Zhao Forschungszentrum Jülich GmbH - Germany
E. Zschech Fraunhofer IKTS, Dresden, Germany

 

International Advisory Committee#

R. H. Dauskardt Stanford University, USA
C. Lavoie IBM, New York, USA
T. Ohba Tokyo Institute of Technology, Japan